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NTMFS4835NT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTMFS4835NT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 7 1 Publication Order Number: NTMFS4835N/D NTMFS4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C ID 20 A TA = 85°C 14 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.27 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 12 A TA = 85°C 9.0 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.89 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 104 A TC = 85°C 75 Power Dissipation RqJC (Note 1) TC = 25°C PD 62.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 208 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 52 A Drain to Source DV/DT dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 28 Apk, L = 1.0 mH, RG = 25 W EAS 392 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 4835N AYWZZ 1 V(BR)DSS RDS(ON) MAX ID MAX 30 V 3.5 mW @ 10 V 104 A 5.0 mW @ 4.5 V G (4) S (1,2,3) N−CHANNEL MOSFET D (5,6) Device Package Shipping† ORDERING INFORMATION NTMFS4835NT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4835NT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. S S S G D D D D |
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