NTMFS4835NT1G datasheet(1/7 Pages) ONSEMI

Part #	NTMFS4835NT1G

Description	Power MOSFET 30V 104A Single N-Channel, SO-8FL

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Manufacturer	ONSEMI [ON Semiconductor]

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May, 2012 − Rev. 7

1

Publication Order Number:

NTMFS4835N/D

NTMFS4835N

Power MOSFET

30 V, 104 A, Single N−Channel, SO−8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

20

A

TA = 85°C

14

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.27

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

12

A

TA = 85°C

9.0

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.89

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

104

A

TC = 85°C

75

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

62.5

W

Pulsed Drain

Current

TA = 25°C,

tp = 10 ms

IDM

208

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

52

A

Drain to Source DV/DT

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL = 28 Apk, L = 1.0 mH, RG = 25 W

EAS

392

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

4835N

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

3.5 mW @ 10 V

104 A

5.0 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4835NT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4835NT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

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