NTMFS4841N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3

°C/W

Junction−to−Ambient – Steady State (Note 1)

57.7

Junction−to−Ambient – Steady State (Note 2)

143.4

Junction−to−Ambient − t = 10 sec

25

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

25

mV/°C

Zero Gate Voltage Drain Current

1

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature Coefficient

5.6

mV/°C

Drain−to−Source On Resistance

11.5 V

4.7

7.0

mW

4.6

9.2

11.4

8.5

Forward Transconductance

16

S

CHARGES AND CAPACITANCES

Input Capacitance

1436

pF

Output Capacitance

348

Reverse Transfer Capacitance

177

Total Gate Charge

11.5

17

nC

Threshold Gate Charge

2.0

Gate−to−Source Charge

5.0

Gate−to−Drain Charge

5.1

Total Gate Charge

25.4

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

13.5

ns

Rise Time

66.5

Turn−Off Delay Time

15.5

Fall Time

7.5

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.