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NTMFS4841NT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMFS4841NT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTMFS4841N http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 3 °C/W Junction−to−Ambient – Steady State (Note 1) RqJA 57.7 Junction−to−Ambient – Steady State (Note 2) RqJA 143.4 Junction−to−Ambient − t = 10 sec RqJA 25 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 25 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25 °C 1 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.6 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V to 11.5 V ID = 30 A 4.7 7.0 mW ID = 15 A 4.6 VGS = 4.5 V ID = 30 A 9.2 11.4 ID = 15 A 8.5 Forward Transconductance gFS VDS = 15 V, ID = 15 A 16 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 12 V 1436 pF Output Capacitance COSS 348 Reverse Transfer Capacitance CRSS 177 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; ID = 30 A 11.5 17 nC Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS 5.0 Gate−to−Drain Charge QGD 5.1 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, ID = 30 A 25.4 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 13.5 ns Rise Time tr 66.5 Turn−Off Delay Time td(OFF) 15.5 Fall Time tf 7.5 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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