NTMFS4845N datasheet(5/6 Pages) ONSEMI

Part #	NTMFS4845N

Description	Power MOSFET 30V 115A Single N-hannel, SO-8FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4845N

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TYPICAL CHARACTERISTICS

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

0.7

0.6

0.5

0.4

0

5

25

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ, STARTING JUNCTION TEMPERATURE(°C)

100

10

1

0.1

1

10

100

1000

75

150

125

100

50

25

0

20

40

60

120

160

180

220

Figure 13. gFS vs. Drain Current

Figure 14. Id vs. Pulse Width

DRAIN CURRENT (A)

PULSE WIDTH (ms)

90

75

60

45

15

0

20

120

140

10,000

1000

100

10

1

10

1000

VDS = 15 V

ID = 15 A

VGS = 11.5 V

tf

tr

td(off)

td(on)

10

15

20

30

VGS = 0 V

TJ = 25°C

10 ms

100 ms

1 ms

10 ms

dc

VGS = 20 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

80

100

140

200

ID = 39 A

30

120

40

80

100

60

125°C

100°C

25°C

VDS = 1.5 V

100

240

160

105

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