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NTMFS4899NF Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTMFS4899NF
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4899NF Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 3
1
Publication Order Number:
NTMFS4899NF/D
NTMFS4899NF
Power MOSFET
30 V, 75 A, Single N−Channel, SO−8 FL
Features
Integrated Schottky Diode
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°C
ID
17.8
A
TA = 85°C
12.9
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.70
W
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
ID
29.1
A
TA = 85°C
21
Power Dissipation
RqJA, t v 10 sec
TA = 25°C
PD
7.18
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
10.4
A
TA = 85°C
7.5
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.92
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
75
A
TC = 85°C
54
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
48
W
Pulsed Drain
Current
tp=10ms
TA = 25°C
IDM
188
A
Current limited by package
TA = 25°C
IDmaxpkg
90
A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
46
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 41 Apk, L = 0.1 mH, RG = 25 W)
EAS
84
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
4899NF
AYWZZ
V(BR)DSS
RDS(ON) MAX
ID MAX
30 V
5.0 mW @ 10 V
75 A
7.5 mW @ 4.5 V
N−CHANNEL MOSFET
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4899NFT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4899NFT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G
S
D
1


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