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HN1K05FU Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. HN1K05FU
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Download  5 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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HN1K05FU Datasheet(HTML) 4 Page - Toshiba Semiconductor

   
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HN1K05FU
2002-01-16
4
(Q1, Q2 common)
*: TOTAL rating
Drain-source voltage VDS (V)
C – VDS
Drain current ID (mA)
t – ID
Ambient temperature Ta (°C)
PD* – Ta
10000
0.1
1
10
100
100
1000
10
Common source
VDD = 1.5 V
VGS = 0 to 1.5 V
Ta
= 25°C
toff
ton
tr
tf
0
10
100
10
1
0.1
100
Common source
VGS = 0
f
= 1 MHz
Ta
= 25°C
Ciss
Coss
Crss
0
40
300
0
80
160
120
100
200


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