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DG536 Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG536 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page DG535/536 Vishay Siliconix www.vishay.com 5-4 Document Number: 70070 S-02315—Rev. D, 05-Oct-00 SPECIFICATIONSa Test Conditions Unless Otherwise Specified A Suffix –55 to 125 _C D Suffix –40 to 85 _C Parameter Symbol V+ = 15 V, ST, CS = 10.5 V CS = 4.5 V, VA = 4.5 or 10.5 Vf Tempb Typc Minc Maxc Minc Maxc Unit Dynamic Characteristics (Cont’d) RIN = 10 W W PLCC Room –92 Adjacent Input Crosstalk XTALK(AI) RIN = 10 W RL = 10 kW f = 5 MHz Cerquad Room –87 TALK(AI) f = 5 MHz See Figure 10 DIP Room –72 RIN = 10 W W PLCC Room –74 –60 –60 dB All Hostile Crosstalke XTALK(AH) RIN = 10 W RL = 10 kW f = 5 MHz Cerquad Room –74 TALK(AH) f = 5 MHz See Figure 7 DIP Room –60 Bandwidth BW RL = 50 W, See Figure 6 Room 500 MHz Power Supplies Positive Supply Current I+ Any One Channgel Selected with All Logic Inputs at GND or V+ Room Full 5 50 100 50 100 mA Supply Voltage Range V+ Full 10 16.5 10 16.5 V Minimum Input Timing Requirements Strobe Pulse Width tSW Full 200 200 A0, A1, A2, A3 CS, CS, EN Data Valid to Strobe tDW See Figure 1 Full 100 100 ns A0, A1, A2, A3 CS, CS, EN Data Valid after Strobe tWD Full 50 50 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 _C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VA = input voltage to perform proper function. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Temperature rDS(on) vs. VD and Power Supply Voltage VD – Drain Voltage (V) VD – Drain Voltage (V) 400 360 280 80 0 010 320 240 40 120 200 160 8 6 4 2 V+ = +15 V GND = 0 V 125 _C 25 _C –55 _C 300 270 210 60 0 010 240 180 30 90 150 120 8 6 4 2 GND = 0 V TA = 25_C 8 V 12 V 15 V |
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