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MTB9D0N10RE3-0-UB-X Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTB9D0N10RE3-0-UB-X Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 8 page CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 5/ 8 MTB9D0N10RE3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 0 10 203040 5060 7080 Qg, Total Gate Charge(nC) ID=13A VDS=80V VDS=20V VDS=50V Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TC=25°C, Tj=175°C VGS=10V, RθJC=1.5°C/W Single Pulse DC 100ms RDSON Limited 10 μs 100 μs 1ms 10ms Maximum Drain Current vs Case Temperature 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) VGS=10V, RθJC=1.5°C/W |
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