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MTB020N03V8-0-T6-G Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTB020N03V8-0-T6-G Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 9 page  CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 1/9 MTB020N03V8 CYStek Product Specification N -Channel Enhancement Mode Power MOSFET MTB020N03V8 BVDSS 30V ID@VGS=10V, TA=25°C 10A ID@VGS=10V, TC=25°C 18A VGS=10V, ID=10A 14.0mΩ RDSON(TYP) VGS=4.5V, ID=8A 17.5mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB020N03V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN3×3 MTB020N03V8 G：Gate D：Drain S：Source Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name |
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