Electronic Components Datasheet Search |
|
MTB100N10RKN6-0-T1-G Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
|
MTB100N10RKN6-0-T1-G Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C059N6 Issued Date : 2017.02.17 Revised Date : Page No. : 5/9 MTB100N10RKN6 Preliminary CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 012345678 Qg, Total Gate Charge(nC) ID=2A VDS=80V VDS=50V VDS=20V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TA=25°C, Tj=150°C VGS=10V, RθJA=62.5°C/W Single Pulse DC 100ms RDSON Limited 100 μs 1ms 10ms 1s 10s Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=62.5°C/W |
Similar Part No. - MTB100N10RKN6-0-T1-G |
|
Similar Description - MTB100N10RKN6-0-T1-G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |