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AM29LV065DU90REEN Datasheet(PDF) 22 Page - Advanced Micro Devices

Part # AM29LV065DU90REEN
Description  64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

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January 10, 2002
Am29LV065D
21
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x8)
Data
Description
1Bh
27h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
00h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
04h
Typical timeout per single byte write 2
N µs
20h
00h
Typical timeout for Min. size buffer write 2
N
µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2
N ms
22h
00h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
05h
Max. timeout for byte write 2
N times typical
24h
00h
Max. timeout for buffer write 2
N times typical
25h
04h
Max. timeout per individual block erase 2
N times typical
26h
00h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
Addresses (x8)
Data
Description
27h
17h
Device Size = 2
N byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
7Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
00h
00h
00h
00h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information (refer to CFI publication 100)


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