SUP70090E datasheet(3/7 Pages) VISHAY

Part #	SUP70090E

Description	N-Channel 100 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUP70090E

www.vishay.com

Vishay Siliconix

S16-0163-Rev. A, 01-Feb-16

3

Document Number: 65436

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

Transconductance

10

100

1000

10000

0

30

60

90

120

012345

Axis Title

V

DS - Drain-to-Source Voltage (V)

2nd line

V

GS = 10 V thru 6 V

V

GS = 5 V

V

GS = 4 V

10

100

1000

10000

0

0.003

0.006

0.009

0.012

0.015

030

60

90

120

Axis Title

I

D - Drain Current (A)

2nd line

V

GS = 7.5 V

V

GS = 10 V

10

100

1000

10000

0

2

4

6

8

10

0

7

14

21

28

35

Axis Title

Q

g - Total Gate Charge (nC)

2nd line

I

D = 15 A

V

DS = 30 V

10

100

1000

10000

0

25

50

75

100

02468

Axis Title

V

GS - Gate-to-Source Voltage (V)

2nd line

T

C = 25 °C

T

C =-55 °C

T

C = 125 °C

10

100

1000

10000

0

600

1200

1800

2400

3000

3600

0

20406080

100

Axis Title

V

DS - Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0

15

30

45

60

0

3.0

6.0

9.0

12.0

15.0

Axis Title

I

D - Drain Current (A)

2nd line

T

C = 25 °C

T

C =-55 °C

T

C = 125 °C

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