SUP40P10-43 datasheet(4/6 Pages) VISHAY

Part #	SUP40P10-43

Description	P-Channel 100-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65458

S09-2035-Rev. A, 05-Oct-09

Vishay Siliconix

SUP40P10-43

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

1

10

40

0.0

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

1.1

1.3

1.5

1.7

1.9

2.1

2.3

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

ID =250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Avalanche Capability

0.02

0.03

0.04

0.05

0.06

0.07

0.08

23456

7

8

910

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

100

0.000001

0.0001

0.01

1

10

0.00001

TA - Time In Avalanche (s)

T

A

L

I

A

BV - V

DD

0.001

Safe Operating Area, Junction-to-Ambient

0.1

100

1

1000

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1ms

100 µs

1

10

100

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

DC

10 µs

BVDSS

10 ms

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SUP40P10-43 Datasheet(PDF) 4 Page - Vishay Siliconix

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