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SI7409ADN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7409ADN Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Vishay Siliconix Si7409ADN Document Number: 73246 S-83051-Rev. C, 29-Dec-08 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile •VDS Optimized for Load Switch • 100 % Rg Tested APPLICATIONS • Load Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) - 30 0.019 at VGS = - 4.5 V - 11 25 0.031 at VGS = - 2.5 V - 8.5 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free) Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID - 11 - 7 A TA = 85 °C - 7.9 - 5 Pulsed Drain Current IDM - 40 Continuous Source Current (Diode Conduction)a IS - 3.2 - 1.3 Maximum Power Dissipationa TA = 25 °C PD 3.8 1.5 W TA = 85 °C 2.0 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 26 33 °C/W Steady State 65 81 Maximum Junction-to-Case Steady State RthJC 1.9 2.4 |
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