SIS322DNT datasheet(1/8 Pages) VISHAY

Part #	SIS322DNT

Description	N-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SiS322DNT

New Product

Document Number: 63569

S12-2185-Rev. A, 10-Sep-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

•

TrenchFET® Gen IV Power MOSFET

•100 % Rg and UIS Tested

•

Thin 0.75 mm height

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Switch Mode Power Supplies

•

Personal Computers and Servers

•

Telecom Bricks

•

VRM’s and POL

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

f. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) () (Max.)

ID (A)

f

Qg (Typ.)

30

0.0075 at VGS = 10 V

38.3

6.9 nC

0.0120 at VGS = 4.5 V

30.2

Ordering Information:

SiS322DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

Thin PowerPAK® 1212-8

Bottom View

0.75 mm

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+ 20, - 16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

38.3

A

TC = 70 °C

30.6

TA = 25 °C

15.3a, b

TA = 70 °C

12.1a, b

Pulsed Drain Current (t = 300 µs)

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

18

TA = 25 °C

2.9a, b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5

mJ

Maximum Power Dissipation

TC = 25 °C

PD

19.8

W

TC = 70 °C

12.7

TA = 25 °C

3.2a, b

TA = 70 °C

3a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, e

t

 10 s

RthJA

31

39

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

56.3

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