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74HC00PW Datasheet(PDF) 8 Page - NXP Semiconductors

Part No. 74HC00PW
Description  Quad 2-input NAND gate
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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74HC00PW Datasheet(HTML) 8 Page - NXP Semiconductors

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2003 Jun 30
8
Philips Semiconductors
Product specification
Quad 2-input NAND gate
74HC00; 74HCT00
Type 74HCT00
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at Tamb =25 °C.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
OTHER
VCC (V)
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input voltage
4.5 to 5.5
2.0
1.6
V
VIL
LOW-level input voltage
4.5 to 5.5
1.2
0.8
V
VOH
HIGH-level output voltage
VI =VIH or VIL
IO = −20 µA
4.5
4.4
4.5
V
IO = −4.0 mA
4.5
3.84
4.32
V
VOL
LOW-level output voltage
VI =VIH or VIL
IO =20 µA
4.5
0
0.1
V
IO = 4.0 mA
4.5
0.15
0.33
V
ILI
input leakage current
VI =VCC or GND
5.5
−−±1.0
µA
IOZ
3-state output OFF current
VI =VIH or VIL;
VO =VCC or GND;
IO =0
5.5
−−±5.0
µA
ICC
quiescent supply current
VI =VCC or GND;
IO =0
5.5
−−
20
µA
∆I
CC
additional supply current per input
VI =VCC − 2.1 V;
IO =0
4.5 to 5.5
150
675
µA
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
4.5 to 5.5
2.0
−−
V
VIL
LOW-level input voltage
4.5 to 5.5
−−
0.8
V
VOH
HIGH-level output voltage
VI =VIH or VIL
IO = −20 µA
4.5
4.4
−−
V
IO = −4.0 mA
4.5
3.7
−−
V
VOL
LOW-level output voltage
VI =VIH or VIL
IO =20 µA
4.5
−−
0.1
V
IO = 4.0 mA
4.5
−−
0.4
V
ILI
input leakage current
VI =VCC or GND
5.5
−−±1.0
µA
IOZ
3-state output OFF current
VI =VIH or VIL;
VO =VCC or GND;
IO =0
5.5
−−±10
µA
ICC
quiescent supply current
VI =VCC or GND;
IO =0
5.5
−−
40
µA
∆ICC
additional supply current per input
VI =VCC − 2.1 V;
IO =0
4.5 to 5.5
−−
735
µA


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