SIE836DF datasheet(4/7 Pages) VISHAY

Part #	SIE836DF

Description	N-Channel 200-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68742

S09-1338-Rev. B, 13-Jul-09

Vishay Siliconix

SiE836DF

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

TJ = 150 °C

10

VSD -Source-to-Drain Voltage (V)

1

100

TJ = 25 °C

2.0

2.5

3.0

3.5

4.0

4.5

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

4567

8

910

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 125 °C

ID =4.1 A

0

30

50

10

20

Time (s)

40

10

1000

1

0.1

0.01

100

Safe Operating Area, Junction-to-Ambient

0.001

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1s

10 s

DC

100 ms

TA = 25 °C

Single Pulse

BVDSS

Limited

Limited byRDS(on)*

1ms

10 ms

0.01

0.1

1

10

100

1000

IDM Limited

ID(on) Limited

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