Electronic Components Datasheet Search |
|
SIA448DJ Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SIA448DJ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 63918 S12-1138-Rev. A, 21-May-12 Vishay Siliconix SiA448DJ New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 21 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 12 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 12.4 A 0.0125 0.0150 VGS = 2.5 V, ID = 11.8 A 0.0138 0.0166 VGS = 1.8 V, ID = 10.8 A 0.0160 0.0200 VGS = 1.5 V, ID = 3 A 0.0180 0.0324 Forward Transconductancea gfs VDS = 10 V, ID = 12.4 A 70 S Dynamicb Input Capacitance Ciss VDS = 1 V, VGS = 0 V, f = 1 MHz 1380 pF Output Capacitance Coss 190 Reverse Transfer Capacitance Crss 75 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 12.4 A 23 35 nC VDS = 10 V, VGS = 4.5 V, ID = 12.4 A 13 20 Gate-Source Charge Qgs 2.1 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 0.6 3.3 6.6 Turn-On Delay Time td(on) VDD = 10 V, RL = 1 ID 10 A, VGEN = 8 V, Rg = 1 714 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 27 41 Fall Time tf 612 Turn-On Delay Time td(on) VDD = 10 V, RL = 1 ID 10 A, VGEN = 4.5 V, Rg = 1 816 Rise Time tr 13 20 Turn-Off Delay Time td(off) 30 45 Fall Time tf 714 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 12c A Pulse Diode Forward Current ISM 30 Body Diode Voltage VSD IS = 10 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 816 ns Body Diode Reverse Recovery Charge Qrr 13 nC Reverse Recovery Fall Time ta 4.5 ns Reverse Recovery Rise Time tb 3.5 |
Similar Part No. - SIA448DJ |
|
Similar Description - SIA448DJ |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |