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11ES1 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 2 page s OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11ES1 Unit Repetitive Peak Reverse Voltage VRRM 100 V Non-repetitive Peak Reverse Voltage VRSM 250 V 0.98 Ta=25 °C *1 Average Rectified Output Current IO 1.0 Ta=50 °C *2 50Hz Half Sine Wave Resistive Load A RMS Forward Current IF(RMS) 1.57 A Surge Forward Current IFSM 45 50Hz Half Sine Wave,1cycle, Non-repetitive A Operating JunctionTemperature Range Tjw - 40 to + 150 °C Storage Temperature Range Tstg - 40 to + 150 °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Reverse Current IRM Tj= 25 °C, VRM= VRRM - - 50 µA Peak Forward Voltage VFM Tj= 25 °C, IFM= 1.0A - - 1.0 V *1 - - 140 Thermal Resistance Rth(j-a) Junction to Ambient *2 110 °C/W *1:Without Fin or P.C. Board *2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides) DIODE Type :::: 11ES1 11ES1 11ES1 11ES1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available |
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