SIA439EDJ datasheet(1/9 Pages) VISHAY

Part #	SIA439EDJ

Description	P-Channel 20 V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 9 page

SiA439EDJ

www.vishay.com

Vishay Siliconix

S13-0108-Rev. A, 21-Jan-13

1

Document Number: 62819

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

FEATURES

•TrenchFET® Power MOSFET

• Thermally Enhanced PowerPAK® SC-70 Package

- Small Footprint Area

- Low On-Resistance

•100 % Rg and UIS Tested

• Typical ESD Protection: 4000 V (HBM)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Portable Devices such as Smart Phones,

Tablet PCs and Mobile Computing

- Battery Switch

- Load Switch

- Power Management

Notes

a. TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) () (Max.)

ID (A)a

Qg (Typ.)

- 20

0.0165 at VGS = - 4.5 V

- 28

26.7 nC

0.0180 at VGS = - 3.7 V

- 27

0.0235 at VGS = - 2.5 V

- 23

0.0420 at VGS = - 1.8 V

- 6

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

G

S

2.05 mm

Ordering Information:

SiA439EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

S

D

G

Marking Code

X X X

B Z X

Lot Traceability

and Date code

Part # code

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 28

A

TC = 70 °C

- 22

TA = 25 °C

- 12b, c

TA = 70 °C

- 9.5b, c

Pulsed Drain Current (t = 300 μs)

IDM

- 60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 16

TA = 25 °C

- 2.9b, c

Single Avalanche Current

L = 0.1 mH

IAS

- 11

Single Avalanche Energy

EAS

5.8

mJ

Maximum Power Dissipation

TC = 25 °C

PD

19

W

TC = 70 °C

12

TA = 25 °C

3.5b, c

TA = 70 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 5 s

RthJA

28

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

5.3

6.5

Similar Part No. - SIA439EDJ

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIA430DJ	226Kb / 9P	N-Channel 20-V (D-S) MOSFET Rev. A, 26-May-08
Analog Devices	SiA430DJ	853Kb / 32P	Dual 5 A, 20 V Synchronous Step-Down REV. 0
	SiA430DJ	843Kb / 28P	20 V, 6 A Synchronous Step-Down REV. 0
	SiA430DJ	2Mb / 32P	Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET REV. A
Vishay Telefunken	SIA430DJ	207Kb / 9P	N-Channel 20 V (D-S) MOSFET

More results

Similar Description - SIA439EDJ

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

More results

SIA439EDJ Datasheet(PDF) 1 Page - Vishay Siliconix

SIA439EDJ Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SIA439EDJ

Similar Description - SIA439EDJ

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL