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2SK3085 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3085
Description  Chopper Regulator, DC-DC Converter and Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3085 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3085
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
F-MOSV)
2SK3085
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
· Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
· High forward transfer admittance: |Yfs| = 3 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
· Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kW)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
3.5
Drain current
Pulse
(Note 1)
IDP
14
A
Drain power dissipation (Tc
= 25°C)
PD
75
W
Single pulse avalanche energy
(Note 2)
EAS
227
mJ
Avalanche current
IAR
3.5
A
Repetitive avalanche energy (Note 3)
EAR
7.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.67
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 28.8 mH, RG = 25 W, IAR = 3.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)


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