2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V

−0.3 to 6.5V

Junction Temperature

150˚C

Storage Temperature

−65˚C to +150˚C

Lead Temp. (Note 3)

235˚C

Pad Temp. (Note 3)

235˚C

Power Dissipation (Note 4)

θ

θ

220˚C/W

340˚C/W

Maximum Power Dissipation

SOT23-5

Micro SMD

364mW

235mW

ESD Rating(Note 5)

Human Body Model

Machine Model

2kV

200V

V

IN

2.5 to 6V

V

EN

0to(V

Junction Temperature

−40˚C to +125˚C

Maximum Power Dissipation (Note 6)

SOT23-5

micro SMD

250mW

160mW

Electrical Characteristics

Unless otherwise specified: V

1 µF, I

appearing in boldface type apply over the entire junction temperature range for operation, −40˚C to +125˚C. (Note 7) (Note 8)

Symbol

Parameter

Conditions

Typ

Limit

Units

Min

Max

∆V

OUT

Output Voltage

Tolerance

−1.2

−2.0

1.2

2.0

%of

V

OUT(nom)

Line Regulation Error

V

options

V

Voltage options higher than 2.5V

0.05

−0.15

0.15

%/V

Load Regulation Error

(Note 9)

I

LP3984IM5 (SOT23-5)

0.002

0.005

%/mA

LP3984IBP (micro SMD)

0.0009

0.002

PSRR

Power Supply Rejection Ratio

V

f = 1 kHz,

I

60

dB

V

f = 10 kHz,

I

40

I

Q

Quiescent Current

V

80

125

µA

V

110

150

V

0.005

1.2

Dropout Voltage (Note 10)

I

0.6

2.5

mV

I

25

40

I

50

80

I

75

120

I

SC

Short Circuit Current Limit

Output Grounded

(Steady State)

600

mA

I

OUT(PK)

Peak Output Current

V

600

300

mA

T

ON

Turn-On Time

(Note 11)

20

µs

e

n

Output Noise Voltage

BW = 10 Hz to 100 kHz,

C

90

µVrms

I

EN

Maximum Input Current at EN

V

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