SI8809EDB datasheet(5/8 Pages) VISHAY

Part #	SI8809EDB

Description	P-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si8809EDB

www.vishay.com

Vishay Siliconix

S15-0346-Rev. C, 23-Feb-15

5

Document Number: 63301

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Safe Operating Area, Junction-to-Ambient

Current Derating*

Power Derating

Note

When mounted on 1" x 1" FR4 with full copper.

* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in

settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when

this rating falls below the package limit.

0.01

0.1

1

10

100

0.1

1

10

100

V

DS -Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

10 s, 1s

10 ms

100

µs

Limited by R

DS(on)*

1 ms

T

A = 25 °C

BVDSS Limited

10 ms

DC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

25

50

75

100

125

150

T

A - Ambient Temperature (°C)

0

0.2

0.4

0.6

0.8

25

50

75

100

125

150

T

A - Ambient Temperature (°C)

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