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SI8447DB Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI8447DB Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si8447DB Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 www.vishay.com 1 P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET ® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Battery Switch • Charger Switch Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) e Qg (Typ.) - 20 0.075 at VGS = - 4.5 V - 11 7.5 nC 0.105 at VGS = - 2.5 V - 9.5 0.260 at VGS = - 1.7 V - 6.0 MICRO FOOT Device Marking: 8447 xxx = Date/Lot Traceability Code Ordering Information: Si8447DB-T2-E1 (Lead (Pb)-free and Halogen-free) DD SS SG 1 2 6 3 5 4 Bump Side View Backside View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 11 A TC = 70 °C - 8.9 TA = 25 °C - 5.1a, b TA = 70 °C - 4.1a, b Pulsed Drain Current IDM - 15 Continuous Source-Drain Diode Current TC = 25 °C IS - 10.8 TA = 25 °C - 2.3a, b Maximum Power Dissipation TC = 25 °C PD 13 W TC = 70 °C 8.4 TA = 25 °C 2.77a, b TA = 70 °C 1.77a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsc VPR 260 IR/Convection 260 |
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