SI8447DB datasheet(1/9 Pages) VISHAY

Part #	SI8447DB

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si8447DB

Document Number: 64802

S-09-0664-Rev. A, 20-Apr-09

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET

® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•

Battery Switch

•

Charger Switch

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

e

Qg (Typ.)

- 20

0.075 at VGS = - 4.5 V

- 11

7.5 nC

0.105 at VGS = - 2.5 V

- 9.5

0.260 at VGS = - 1.7 V

- 6.0

MICRO FOOT

Device Marking: 8447

xxx = Date/Lot Traceability Code

Ordering Information: Si8447DB-T2-E1 (Lead (Pb)-free and Halogen-free)

DD

SS

SG

1

2

6

3

5

4

Bump Side View

Backside View

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 11

A

TC = 70 °C

- 8.9

TA = 25 °C

- 5.1a, b

TA = 70 °C

- 4.1a, b

Pulsed Drain Current

IDM

- 15

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 10.8

TA = 25 °C

- 2.3a, b

Maximum Power Dissipation

TC = 25 °C

PD

13

W

TC = 70 °C

8.4

TA = 25 °C

2.77a, b

TA = 70 °C

1.77a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Package Reflow Conditionsc

VPR

260

IR/Convection

260

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