SI4890BDY datasheet(3/7 Pages) VISHAY

Part #	SI4890BDY

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 7 page

Document Number: 69502

S09-0540-Rev. B, 06-Apr-09

www.vishay.com

3

Vishay Siliconix

Si4890BDY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

50

0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

3 V

4 V

0.006

0.008

0.010

0.012

0.014

0.016

0

10203040

50

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0

2

4

6

8

10

0

5

10

15

20

25

ID =10A

Qg - Total Gate Charge (nC)

VDS =10 V

VDS =15 V

VDS =20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

0.5

1.0

1.5

2.0

0

1234

5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TJ = - 55 °C

TC = 125 °C

Crss

0

400

800

1200

1600

2000

0

6

12

18

24

30

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

TJ -Junction Temperature (°C)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =10A

VGS =10 V

VGS =4.5 V

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