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SI4668DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI4668DY
Description  N-Channel 25-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4668DY Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 69513
S09-0394-Rev. B, 09-Mar-09
Vishay Siliconix
Si4668DY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
25
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
25
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 5.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.8
2.6
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
1
µA
VDS = 25 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0085
0.0105
Ω
VGS = 4.5 V, ID = 10 A
0.010
0.0125
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
58
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1654
pF
Output Capacitance
Coss
245
Reverse Transfer Capacitance
Crss
106
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
27.5
42
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
12.4
19
Gate-Source Charge
Qgs
4
Gate-Drain Charge
Qgd
3.3
Gate Resistance
Rg
f = 1 MHz
0.6
1.2
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
21
40
ns
Rise Time
tr
12
24
Turn-Off Delay Time
td(off)
73
120
Fall Time
tf
18
35
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
10
20
Rise Time
tr
11
22
Turn-Off Delay Time
td(off)
23
45
Fall Time
tf
8
16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
4.5
A
Pulse Diode Forward Currenta
ISM
60
Body Diode Voltage
VSD
IS = 3 A
0.77
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
22
40
ns
Body Diode Reverse Recovery Charge
Qrr
15
30
nC
Reverse Recovery Fall Time
ta
12
ns
Reverse Recovery Rise Time
tb
10


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