SIS407ADN datasheet(3/13 Pages) VISHAY

Part #	SIS407ADN

Description	P-Channel 20 V (D-S) MOSFET

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SiS407ADN

www.vishay.com

Vishay Siliconix

S14-0911-Rev. A, 28-Apr-14

3

Document Number: 63239

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

Normalized On-Resistance vs. Junction Temperature

0

14

28

42

56

70

0

0.5

1

1.5

2

VDS - Drain- to- Source Voltage (V)

VGS= 1.8 V

VGS= 2 V

VGS= 5 V thru 2.5 V

VGS= 1.5 V

0.003

0.007

0.011

0.015

0.019

0.023

0

14

28

42

56

70

ID - Drain Current (A)

V

GS = 1.8 V

V

GS = 2.5 V

VGS = 4.5 V

Qg - Total Gate Charge (nC)

0

2

4

6

8

10

0

30

60

90

120

VDS = 16 V

VDS = 15 V

VDS = 8 V

ID = 16.7 A

0

1

2

3

4

5

0

0.5

1

1.5

2

V

GS - Gate-to-Source Voltage (V)

TC = 25 °C

T

C = 125 °C

T

C = -55 °C

0

2200

4400

6600

8800

0

5

10

15

20

VDS - Drain-to-Source Voltage (V)

Ciss

Coss

Crss

0.7

0.9

1.1

1.3

1.5

-50

-25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V, 15 A, 2.5 V, 13 A

VGS = 1.8 V, 5 A

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