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SIR788DP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIR788DP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page Vishay Siliconix SiR788DP www.vishay.com 4 Document Number: 63659 S12-0808-Rev. A, 16-Apr-12 New Product This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 025 50 75 100 125 150 T J - Temperature (°C) 20 V 10 V 30 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.002 0.004 0.006 0.008 0.010 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 20 A 0 40 80 120 160 200 0.001 0.01 0.1 1 10 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms I DM Limited T A = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited |
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