SiHS36N50D

www.vishay.com

Vishay Siliconix

S12-1457-Rev. A, 18-Jun-12

1

Document Number: 91514

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

D Series Power MOSFET

FEATURES

•Optimal Design

- Low Area specific On-Resistance

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Fast Switching

• Material categorization: For definitions of compliance

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding, Induction Heating, Motor Drives

• Battery Chargers

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

c. 1.6 mm from case.

PRODUCT SUMMARY

550

0.130

125

23

37

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

Super-247

ORDERING INFORMATION

Package

Super-247

Lead (Pb)-free

SiHS36N50D-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Gate-Source Voltage AC (f > 1 Hz)

30

36

A

23

112

Linear Derating Factor

3.6

W/°C

332

mJ

Maximum Power Dissipation

446

W

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Drain-Source Voltage Slope

dV/dt

24

V/ns

0.1

Soldering Recommendations (Peak Temperature)

for 10 s

°C