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SIB433EDK Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIB433EDK Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix SiB433EDK Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com P-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance •100 % Rg Tested • Typical ESD Performance 2000 V • Built in ESD Protection with Zener Diode • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Devices • Charger Switch for Portable Devices Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile ( www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) - 20 0.058 at VGS = - 4.5 V - 9a 7.6 nC 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V - 5 PowerPAK SC-75-6L-Single 6 5 4 1 2 3 D D D D G S S 1.60 mm 1.60 mm Ordering Information: SiB433EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET S D R G Marking Code X X X B L X Lot Traceability and Date code Part # code ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 9a A TC = 70 °C - 9a TA = 25 °C - 5.3b, c TA = 70 °C - 4.3b, c Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 9a TA = 25 °C - 2b, c Maximum Power Dissipation TC = 25 °C PD 13 W TC = 70 °C 8.4 TA = 25 °C 2.4b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 41 51 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 7.5 9.5 |
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