SI7117DN datasheet(4/13 Pages) VISHAY

Part #	SI7117DN

Description	P-Channel 150 V (D-S) MOSFET

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Document Number: 73478

S11-0648-Rev. C, 11-Apr-11

Vishay Siliconix

Si7117DN

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 0.5

- 0.2

0.1

0.4

0.7

1.0

1.3

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.00

2.00

4.00

6.00

8.00

10.00

TA = 25 °C

TA = 125 °C

VGS - Gate-to-Source Voltage (V)

0

10

20

30

40

50

Time (s)

0.01

0.1

1

10

100

1000

TA = 25 °C

Safe Operating Area at TA = 25 °C

0

0.01

0.1

1

10

0.1

1

10

100

1000

T

A = 25 °C

Single Pulse

1 ms

10 ms

100 ms

DC

1 s

10 s

100 µs

10 µs

100 s

Limited by R

DS(on)*

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at RDS(on) is specified

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