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SI3476DV Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3476DV Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 62884 S13-1818-Rev. A, 12-Aug-13 Vishay Siliconix Si3476DV This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C 1.3 1.55 1.8 2.05 2.3 2.55 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA RDS(on) vs. VGS vs. Temperature Single Pulse Power (Junction-to-Ambient) 0.000 0.060 0.120 0.180 0.240 0.300 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 3.5 A 0 9 18 27 36 45 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 100 μs 10 s,1 s DC |
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