SI3476DV datasheet(4/11 Pages) VISHAY

Part #	SI3476DV

Description	N-Channel 80 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 62884

S13-1818-Rev. A, 12-Aug-13

Vishay Siliconix

Si3476DV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

1.3

1.55

1.8

2.05

2.3

2.55

- 50

- 25

0

25

50

75

100

125

150

T

J - Temperature (°C)

I

D = 250 μA

RDS(on) vs. VGS vs. Temperature

Single Pulse Power (Junction-to-Ambient)

0.000

0.060

0.120

0.180

0.240

0.300

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 3.5 A

0

9

18

27

36

45

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.001

0.01

0.1

1

10

100

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

T

A = 25 °C

BVDSS Limited

10 ms

100 μs

10 s,1 s

DC

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