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SI3417DV Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI3417DV Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Vishay Siliconix Si3417DV Document Number: 62890 S13-1815-Rev. A, 12-Aug-13 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 VGS =10 V thru 5 V VGS =3 V VGS =4 V VDS - Drain-to-Source Voltage (V) 0.012 0.018 0.024 0.030 0.036 0.042 0 10 20 30 40 50 I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 0 2 4 6 8 10 09 18 27 36 VDS =22.5 V ID = 7.3 A VDS =15 V VDS =7.5 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 1 2 3 4 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 600 1200 1800 2400 0 6 12 18 24 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =10 V VGS =4.5 V ID =7.3 A TJ -Junction Temperature (°C) |
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