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TPD1024S Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TPD1024S
Description  TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD1024S Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPD1024S
2002-10-24
3
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS (DC)
40
V
Output current
ID
1.5
A
Input voltage
VGS
−0.5 ~ 6
V
Ta = 25°C
1
Power dissipation
Tc = 25°C
PD
10
W
Operating temperature
Topr
−40 ~ 85
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ~ 150
°C
Recommendable Condition
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Input voltage
VIN
4.5
5
6
V
Electrical Characteristics (Tj = 25°C)
Characteristic
Symbol
Test
Cir-
cuit
Test Condition
Min
Typ.
Max
Unit
Drain-source breakdown voltage
V(BR) DSS
VGS = 0, ID = 10 mA
40
V
Operating supply voltage
VDD (OPR)
18
V
IDSS (1)
VGS = 0, VDS = 40 V
3
mA
Current at output off
IDSS (2)
VGS = 0, VDS = 24 V
100
µA
Input threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.5
V
Input current
IGSS
VGS = 5 V,
at normal operation
300
µA
On resistance
RDS (ON)
VGS = 5 V, ID = 1 A
0.5
Thermal shutdown temperature
TS
160
°C
Overcurrent protection
IS
VDS = 12 V, VGS = 5 V
3.5
A
tON
50
µs
Switching time
tOFF
1
VDS = 12 V, VGS = 5 V,
RL = 12 Ω
10
µs
Diode forward voltage
Between drain and source
VDSF
IF = 1.5 A
0.9
1.8
V
Avalanche energy
EA
L = 10 mH, Single pulse
30
mJ
Test Circuit 1


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