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TLP3526 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP3526
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
Download  6 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP3526 Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TLP3526
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
10
µA
Capacitance
CT
V = 0, f = 1MHz
30
pF
Peak off
-state current
IDRM
VDRM = 600V, Ta = 110°C
100
µA
Peak on
-state voltage
VTM
ITM = 1.5A
3.0
V
Holding current
IH
RL = 100Ω
25
mA
Critical rate of rise of
off
-state voltage
dv / dt
Vin = 240Vrms
(Fig.1)
500
V/µs
Critical rate of rise of
commutating voltage
dv / dt(c)
Vin = 240Vrms, IT = 1.0Arms
(Fig.1)
5
V/µs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VT = 6V
10
mA
Capacitance
(input to output)
CS
VS = 0, f = 1MHz
1.5
pF
Isolation resistance
RS
VS = 500V
5×10
10
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
5000
Vdc
Fig.1: dv / dt test circuit
5V,VCC
0V
dv/dt(c)
dv/dt
Rin
RL
Vin
2
3
15
VCC
120Ω
13
11
9


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