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TLP3526 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP3526
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
Download  6 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP3526 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TLP3526
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta ≥ 53°C)
∆IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off
-state output terminal voltage
VDRM
600
V
Ta = 40°C
1.0
On
-state RMS current
Ta = 60°C
IT(RMS)
0.7
A
On
-state current derating (Ta ≥ 40°C)
∆IT / °C
-14.3
mA / °C
Peak current from snubber circuit
(100µs pulse, 120pps)
ISP
2
A
Peak nonrepetitive surge current (50Hz, peak)
ISTM
10
A
Junction temperature
Tj
110
°C
Storage temperature range
Tstg
-40~125
°C
Operating temperature range
Topr
-20~80
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1min., R.H.≤ 60%)
(Note)
BVS
2500
Vrms
(Note 1) Device considered a two terminal: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
240
Vac
Forward current
IF
15
20
25
mA
Peak current from snubber circuit
ISP
1
A
Operating temperature
Topr
-20
80
°C


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