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S9015 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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S9015 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor S9015 C084 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-5V,IC=-1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=- 10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB= -10mA -1 V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank L H Range 200-450 450-1000 |
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