S9012_14 datasheet(2/4 Pages) BILIN

Part #	S9012

Description	PNP Silicon Epitaxial Planar Transistor

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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Production specification

PNP Silicon Epitaxial Planar Transistor

S9012

C081

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-40

V

Collector-emitter breakdown voltage V(BR)CEO

IC=-1mA,IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V,IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V,IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-1V,IC=-50mA

120

400

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V, IC= -20mA

f=30MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

5

pF

CLASSIFICATION OF hFE(1)

Rank

L

H

J

Range

120-200

200-350

300-400

MARKING

2T1

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S9012 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

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