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SUB75N06-12L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUB75N06-12L
Description  N-Channel 60-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUB75N06-12L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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SUP/SUB75N06-12L
Vishay Siliconix
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
www.vishay.com
S FaxBack 408-970-5600
2-1
N-Channel 60-V (D-S), 175
_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
60
0.012 @ VGS = 10 V
75
60
0.014 @ VGS = 4.5 V
70
D
G
S
N-Channel MOSFET
TO-220AB
Top View
GD S
SUP75N06-12L
SUB75N06-12L
TO-263
S
G
Top View
DRAIN connected to TAB
D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 175_C)
TC = 25_C
ID
75
A
Continuous Drain Current (TJ = 175_C)
TC = 100_C
ID
53
A
Pulsed Drain Current
IDM
180
A
Avalanche Current
IAR
60
Repetitive Avalanche Energya
L = 0.1 mH
EAR
180
mJ
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
PD
142b
W
Power Dissipation
TA = 25_C (TO-263)c
PD
3.75c
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)c
RthJA
40
_C/W
Junction-to-Ambient
Free Air (TO-220AB)
RthJA
62.5
_C/W
Junction-to-Case
RthJC
1.05
Notes:
a.
Duty cycle
v 1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1” square PCB (FR-4 material).


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