SKP04N60 datasheet(3/13 Pages) INFINEON | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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SKP04N60 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part #	SKP04N60

Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Download	13 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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SKP04N60 Datasheet(HTML) 3 Page - Infineon Technologies AG

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3 / 13 page

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SKP04N60

SKB04N60

3Jul-02

Switching Characteristic, Inductive Load, at Tj=25

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

t d( o n)

-22

26

Rise time

t r

-15

18

Turn-off delay time

t d( of f)

-

237

284

Fall time

t f

-70

84

ns

Turn-on energy

Eon

-

0.070

0.081

Turn-off energy

Eoff

-

0.061

0.079

Total switching energy

Ets

T j =2 5

°C,

VCC =400V, IC =4A,

VGE =0/15V,

R G =67

Ω,

L σ

1)

=1 80n H,

C σ

1) =180pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.131

0.160

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

t S

t F

-

-

-

180

15

165

-

-

-

ns

Diode reverse recovery charge

Q rr

-

130

-

nC

Diode peak reverse recovery current

I rr m

-2.5

-

A

Diode peak rate of fall of reverse

recovery current during t b

dirr /d t

T j =2 5

°C,

VR =200 V, IF =4A,

diF/dt =200A/

µs

-

180

-

A/

µs

Switching Characteristic, Inductive Load, at Tj=150

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

t d( o n)

-22

26

Rise time

t r

-16

19

Turn-off delay time

t d( of f)

-

264

317

Fall time

t f

-

104

125

ns

Turn-on energy

Eon

-

0.115

0.132

Turn-off energy

Eoff

-

0.111

0.144

Total switching energy

Ets

T j =150

°C

VCC =400V, IC =4A,

VGE =0/15V,

R G =67

Ω,

L σ

1)

=1 80n H,

C σ

1) =180pF

Energy losses include

“tail” and diode

reverse recovery.

-

0.226

0.277

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

t S

t F

-

-

-

230

23

227

-

-

-

ns

Diode reverse recovery charge

Q rr

-

300

-

nC

Diode peak reverse recovery current

I rr m

-4

-

A

Diode peak rate of fall of reverse

recovery current during t b

dirr /d t

T j =150

°C

VR =200 V, IF =4A,

diF/dt =200A/

µs

-

200

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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