SI4473BDY-T1-E3 datasheet(1/5 Pages) VISHAY

Part #	SI4473BDY-T1-E3

Description	P-Channel 14-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D 100% Rg Tested

APPLICATION

D Battery Switch for Portable Devices

Si4473BDY

Vishay Siliconix

New Product

Document Number: 72691

S-32676—Rev. A, 29-Dec-03

www.vishay.com

1

P-Channel 14-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

−14

0.011 @ VGS = −4.5 V

−13

−14

0.018 @ VGS = −2.5 V

−10

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

Ordering Information: Si4473BDY—E3 (lLead Free)

Si4473BDY-T1—E3 (Lead Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

−14

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−13

−9.8

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

−9.9

−7.8

A

Pulsed Drain Current

IDM

−50

A

continuous Source Current (Diode Conduction)a

IS

−2.3

−1.34

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.5

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

0.94

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

40

50

Maximum Junction-to-Ambienta

Steady State

RthJA

70

85

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

15

18

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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SI4473BDY-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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