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VT30L60C-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. VT30L60C-E3
Description  Low forward voltage drop, low power losses
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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VT30L60C-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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VT30L60C-E3, VIT30L60C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
1
Document Number: 89380
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization:
for
definitions
of
compliance
please
see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, and commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
200 A
VF at IF = 15 A
0.45 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-262AA
TMBS
®
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
CASE
PIN 3
VT30L60C
VIT30L60C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT30L60C
VIT30L60C
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
V
Maximum average forward rectified current
(fig. 1)
per device
IF(AV)
30
A
per diode
15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C


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