NVTFS5116PLWFTAG datasheet(4/6 Pages) ONSEMI

Part #	NVTFS5116PLWFTAG

Description	Power MOSFET

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NVTFS5116PL

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TYPICAL CHARACTERISTICS

0

200

400

600

800

1000

1200

1400

1600

1800

0

10

20304050

60

Figure 7. Capacitance Variation

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

0

2

4

6

8

10

0

5

10

15

20

25

Figure 8. Gate−to−Source Voltage vs. Total

Charge

Qg, TOTAL GATE CHARGE (nC)

VDS = −48 V

ID = −7 A

TJ = 25°C

QT

Qgs

Qgd

1.0

10

100

1000

1

10

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

td(off)

td(on)

tf

tr

VDD = −48 V

ID = −7 A

VGS = −4.5 V

0

10

20

30

40

0.5

0.6

0.7

0.8

0.9

1.0

Figure 10. Diode Forward Voltage vs. Current

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

VGS = 0 V

0.1

1

10

100

1000

0.1

1

10

100

VGS = −10 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100

ms

10

ms

1 ms

dc

10 ms

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0

15

30

45

25

50

75

100

125

150

175

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = −30 A

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NVTFS5116PLWFTAG Datasheet(PDF) 4 Page - ON Semiconductor

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