NVTFS4C10N_16 datasheet(3/6 Pages) ONSEMI

Part #	NVTFS4C10N

Description	Power MOSFET

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NVTFS4C10N

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

3

2

1

0

10

20

50

15

55

4.0

3.5

3.0

2.0

1.5

1.0

Figure 3. On−Resistance vs. VGS

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

9.0

8.0

7.0

10

6.0

5.0

4.0

3.0

0.002

0.006

0.010

70

50

30

60

40

20

0.006

0.010

0.016

0.020

0.002

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

175

125

100

75

25

0

−25

−50

0.8

1.0

1.1

1.3

30

25

20

15

10

5

10

100

1000

10000

65

5

4.2 V to 10 V

3.6 V

3.2 V

3.0 V

2.8 V

2.6 V

3.8 V

TJ = 25°C

VDS = 5 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

0.008

0.014

ID = 30 A

VGS = 4.5 V

TJ = 25°C

VGS = 10 V

50

ID = 30 A

VGS = 10 V

VGS = 0 V

TJ = 85°C

TJ = 150°C

TJ = 125°C

2.5

0.004

0.014

0.012

1.2

1.4

0.7

1.5

45

0.016

60

10

3.4 V

4

0

20

40

60

30

70

10

50

80

5.0

0.5

0

0.020

0.018

0.004

1.6

1.9

0.9

4.5

25

30

35

40

4.0 V

0.008

0.012

0.018

150

1.7

1.8

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