NVMFS6B03NT3G datasheet(1/6 Pages) ONSEMI

Part #	NVMFS6B03NT3G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2016 − Rev. 1

1

Publication Order Number:

NVMFS6B03N/D

NVMFS6B03N

Power MOSFET

100 V, 4.8 m

W, 145 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• NVMFS6B03NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

100

V

Gate−to−Source Voltage

VGS

±16

V

Continuous Drain Cur-

rent RqJC (Notes 1, 2,

3)

Steady

State

TC = 25°C

ID

145

A

TC = 100°C

102

Power Dissipation

RqJC (Notes 1, 2)

TC = 25°C

PD

198

W

TC = 100°C

99

Continuous Drain Cur-

rent RqJA (Notes 1, 2,

3)

Steady

State

TA = 25°C

ID

20

A

TA = 100°C

14

Power Dissipation

RqJA (Notes 1 & 2)

TA = 25°C

PD

3.9

W

TA = 100°C

2.0

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

520

A

Operating Junction and Storage Temperature

TJ, Tstg

− 55 to

+ 175

°C

Source Current (Body Diode)

IS

160

A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL(pk) = 60 A, L = 0.1 mH, RG = 25 W)

EAS

180

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

0.76

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

38

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

MARKING

DIAGRAM

www.onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

XXXXXX

AYWZZ

V(BR)DSS

RDS(ON) MAX

ID MAX

100 V

4.8 m

W @ 10 V

145 A

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

S

G

D

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

1

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

ORDERING INFORMATION

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