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NTD5406NT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD5406NT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTD5406N, STD5406N www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 42 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 mA TJ = 100°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±30 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 3.5 V Gate Threshold Temperature Coefficient VGS(TH)/TJ −7.0 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 30 A 8.7 10 m W VGS = 5.0 V, ID = 10 A 13.2 17 Forward Transconductance gFS VGS = 10 V, ID = 10 A 19 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = 32 V 1375 2500 pF Output Capacitance COSS 370 700 Reverse Transfer Capacitance CRSS 160 300 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V, ID = 30 A 45 nC Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS 5.4 Gate−to−Drain Charge QGD 20 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time td(ON) VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W 7.2 ns Rise Time tr 57 Turn−Off Delay Time td(OFF) 30 Fall Time tf 67 SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time td(ON) VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 15 ns Rise Time tr 147 Turn−Off Delay Time td(OFF) 20 Fall Time tf 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.82 1.1 V TJ = 125°C 0.67 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 10 A 46 ns Charge Time ta 24 Discharge Time tb 22 Reverse Recovery Charge QRR 65 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. |
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