NTD5406N, STD5406N

www.onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

42

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.5

3.5

V

Gate Threshold Temperature

Coefficient

−7.0

mV/

°C

Drain−to−Source On Resistance

8.7

10

m

W

13.2

17

Forward Transconductance

19

S

CHARGES AND CAPACITANCES

Input Capacitance

1375

2500

pF

Output Capacitance

370

700

Reverse Transfer Capacitance

160

300

Total Gate Charge

45

nC

Threshold Gate Charge

2.0

Gate−to−Source Charge

5.4

Gate−to−Drain Charge

20

Turn−On Delay Time

7.2

ns

Rise Time

57

Turn−Off Delay Time

30

Fall Time

67

Turn−On Delay Time

15

ns

Rise Time

147

Turn−Off Delay Time

20

Fall Time

29

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.82

1.1

V

0.67

Reverse Recovery Time

46

ns

Charge Time

24

Discharge Time

22

Reverse Recovery Charge

65

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.