NTD5406N_16 datasheet(4/6 Pages) ONSEMI

Part #	NTD5406N

Description	Power MOSFET

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NTD5406N, STD5406N

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4

TYPICAL PERFORMANCE CURVES

Figure 7. Capacitance Variation

Figure 8. Gate−To−Source and

Drain−To−Source Voltage vs. Total Charge

5

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

VGS = 0 V

TJ = 25°C

25

Figure 10. Diode Forward Voltage vs. Current

0.8

0.6

20

15

RG, GATE RESISTANCE (OHMS)

1

10

100

10

1

VDS = 32 V

ID = 30 A

VGS = 10 V

tr

td(on)

1000

tf

td(off)

10

0

9

0

QG, TOTAL GATE CHARGE (nC)

12

20

40

ID = 30 A

TJ = 25°C

VGS

QGS

QGD

QT

6

3

50

0.4

0.7

0.5

27

0

36

18

9

VDS

VDS = 0 V VGS = 0 V

20

10

2400

1200

0

40

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

Coss

Ciss

Crss

3600

0

VGS

VDS

30

Crss

Ciss

100

0.9

1

1800

600

3000

10

30

25

15

55

35

0.1

1

10

100

1000

0.1

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 10 V

SINGLE PULSE

TC = 25°C

1 ms

100

ms

10 ms

dc

10

ms

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NTD5406N Datasheet(PDF) 4 Page - ON Semiconductor

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