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NTD5406N Datasheet(PDF) 4 Page - ON Semiconductor |
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NTD5406N Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NTD5406N, STD5406N www.onsemi.com 4 TYPICAL PERFORMANCE CURVES Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 5 0 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance VGS = 0 V TJ = 25°C 25 Figure 10. Diode Forward Voltage vs. Current 0.8 0.6 20 15 RG, GATE RESISTANCE (OHMS) 1 10 100 10 1 VDS = 32 V ID = 30 A VGS = 10 V tr td(on) 1000 tf td(off) 10 0 9 0 QG, TOTAL GATE CHARGE (nC) 12 20 40 ID = 30 A TJ = 25°C VGS QGS QGD QT 6 3 50 0.4 0.7 0.5 27 0 36 18 9 VDS VDS = 0 V VGS = 0 V 20 10 10 2400 1200 0 40 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C Coss Ciss Crss 3600 0 VGS VDS 30 Crss Ciss 100 0.9 1 1800 600 3000 10 30 30 25 15 55 35 0.1 1 10 100 1000 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 10 V SINGLE PULSE TC = 25°C 1 ms 100 ms 10 ms dc 10 ms |
Similar Part No. - NTD5406N_16 |
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Similar Description - NTD5406N_16 |
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