RSF05G1-3P datasheet(1/6 Pages) TOSHIBA

Part #	RSF05G1-3P

Description	LOW POWER SWITCHING AND CONTROL APPLICATIONS

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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RSF05G1−1P,RSF05G1−3P,RSF05G1−5P

2001-07-10

1

TOSHIBA THYRISITOR SILICON PLANAR TYPE

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P

LOW POWER SWITCHING AND CONTROL APPLICATIONS

l Repetitive Peak Off−State Voltage

: VDRM = 400V

Repetitive Peak Reverse Voltage

: VRRM = 400V

l Average On−State Current

: IT (AV) = 500mA

l Plastic Mold Type

l Reduce a Quantity of Parts and Manufacturing

Process Because of Built-in RGK

: RGK = 1kΩ, 2.7kΩ, 5.1kΩ

(Typical)

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

RSF05G1−1P

400

RSF05G1−3P

400

Repetitive Peak

Off−State Voltage and

Repetitive Peak

Reverse Voltage

RSF05G1−5P

VDRM

VRRM

400

V

RSF05G1−1P

500

RSF05G1−3P

500

Non−Repetitive Peak

Reverse Voltage

(Non−Repetitive<

5ms, Tj = 0~125°C)

RSF05G1−5P

VDSM

500

V

Average On−State Current

(Half Sine Waveform)

IT(AV)

500

mA

R.M.S. On−State Current

IT(RMS)

800

mA

9 (50Hz)

Peak One Cycle Surge On−State

Current (Non−Repetitive)

ITSM

10 (60Hz)

A

I

2

t Limit Value

I

2

t

0.4

A

2

s

Critical Rate of Rise of On−State

Current

di / dt

10

A / µs

Peak Gate Power Dissipation

PGM

0.1

W

Average Gate Power Dissipation

PG(AV)

0.01

W

Peak Forward Gate Voltage

VFGM

3.5

V

Peak Reverse Gate Voltage

VRGM

−5

V

Peak Forward Gate Current

IGM

125

mA

Junction Temperature

Tj

−40~125

°C

Storage Temperature

Tstg

−40~125

°C

Note:

di / dt Test Condition, iG = 5mA, tgw = 10µs, tgr ≤ 250ns

Unit: mm

JEDEC

TO−92

JEITA

SC−43

TOSHIBA

13−5A1A

Weight: 0.2g

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