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RN2701JE Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. RN2701JE
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN2701JE Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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RN2701JE~RN2706JE
2002-01-24
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
· Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
· Complementary to RN1701JE~RN1706JE
Equivalent Circuit and Bias Resistor Values
Maximum Ratings (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
RN2701JE~RN2706JE
VCEO
-50
V
RN2701JE~RN2704JE
-10
Emitter-base voltage
RN2705JE, RN2706JE
VEBO
-5
V
Collector current
IC
-100
mA
Collector power dissipation
PC
(Note)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
RN2701JE~RN2706JE
Tstg
-55~150
°C
Note: Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight:
g (typ.)
Equivalent Circuit
(top view)
5
4
1
2
3
Q2
Q1
Type No.
R1 (k
W)
R2 (k
W)
RN2701JE
4.7
4.7
RN2702JE
10
10
RN2703JE
22
22
RN2704JE
47
47
RN2705JE
2.2
47
RN2706JE
4.7
47
R1
B
C
E


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