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RN2004 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN2004 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page RN2001 ~RN2006 2001-06-07 1 Type No. R1 (kΩ) R2 (kΩ) RN2001 4.7 4.7 RN2002 10 10 RN2003 22 22 RN2004 47 47 RN2005 2.2 47 RN2006 4.7 47 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1001~RN1006 Equivalent Circuit and Bias Resister Values Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage RN2001~2006 VCEO −50 V RN2001~2004 −10 Emitter-base voltage RN2005, 2006 VEBO −5 V Collector current IC −100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature range RN2001~2006 Tstg −55~150 °C JEDEC TO-92 EIAJ SC-43 TOSHIBA 2-5F1B Weight: 0.21g Unit: mm |
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