V12P8-M3, V12P8HM3

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Vishay General Semiconductor

Revision: 05-May-15

1

Document Number: 87714

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available



- Automotive ordering code; base P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: TO-277A (SMPC)



Molding compound meets UL 94 V-0 flammability rating



Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

AEC-Q101 qualified



Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified



(“_X” denotes revision code e.g. A, B,.....)

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Notes

PRIMARY CHARACTERISTICS

12 A

80 V

200 A

0.54 V

150 °C

Package

TO-277A (SMPC)

Diode variation

Single die

K

2

1

TO-277A (SMPC)

Anode 1

Anode 2

Cathode

K

Available

PARAMETER

SYMBOL

V12P8

UNIT

Device marking code

V128

Maximum repetitive peak reverse voltage

80

V

Maximum average forward rectified current (fig. 1)

12

A

4.3

Peak forward surge current 10 ms single half sine-wave



superimposed on rated load

200

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-40 to +150

°C